DocumentCode
2578222
Title
The origin of gate hysteresis and gate delay of MESFETs appear under low frequency operation
Author
Fujisaki, Y. ; Matsunaga, N.
Author_Institution
Hitachi Ltd., Tokyo, Japan
fYear
1988
fDate
6-9 Nov. 1988
Firstpage
235
Lastpage
238
Abstract
The very slow response of MESFETs to the gate signal is investigated in relation to deep levels in a bulk crystal. It is demonstrated that this response originates from a complex of recombination centers and hole traps whose level is connected with arsenic vacancies. The activation energy of these traps is approximately 0.40 eV. This slow response is also attributable to the transconductance degradation under high-frequency MESFET operation. It is shown that the arsenic-poor composition of the crystal can be compensated by the P and SI coimplantation technique.<>
Keywords
Schottky gate field effect transistors; deep levels; electron-hole recombination; As vacancies; MESFETs; P; Si; activation energy; bulk crystal; coimplantation technique; deep levels; gate delay; gate hysteresis; gate signal; hole traps; low frequency operation; recombination centers; transconductance degradation; Degradation; Delay; Electrodes; FETs; Frequency; Gallium arsenide; Hysteresis; MESFETs; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location
Nashville, Tennessee, USA
Type
conf
DOI
10.1109/GAAS.1988.11065
Filename
11065
Link To Document