Title :
GaN-Based heterojunction structures for ultraviolet/infrared dual-band detection
Author :
Perera, A. G Unil ; Jayasinghe, Ranga C. ; Ariyawansa, Gamini ; Dietz, Nikolaus ; Matsik, Steven G. ; Ferguson, Ian T. ; Liu, Hui Chun
Author_Institution :
NDP Optronics LLC, Mableton, GA, USA
Abstract :
Ultraviolet and infrared (UV/IR) dual-band photodetectors based on GaN/AlGaN heterojunction structures are presented. Since the UV/IR dual-band detectors do not respond to solar radiation or another artificial visible lighting, these detectors are highly applicable for tracking and surveillance of targets. A dual-band detector which simultaneously detects UV in the 250 - 360 nm and IR in the 3 - 14 mum regions, showing a near zero spectral crosstalk between the two spectral bands, is discussed. A UV/IR detector design to further improve the detection capabilities is also reported.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; infrared detectors; photodetectors; semiconductor heterojunctions; ultraviolet detectors; wide band gap semiconductors; GaN-AlGaN; heterojunction structures; near zero spectral crosstalk; ultraviolet/infrared dual-band detection; wavelength 250 nm to 360 nm; wavelength 3 micron to 14 micron; Aluminum gallium nitride; Dual band; Gallium nitride; Heterojunctions; Infrared detectors; Photodetectors; Radiation detectors; Solar radiation; Surveillance; Target tracking; Dual-band; GaN; Heterojunction; Infrared Detector; Ultraviolet detector;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE
Conference_Location :
Traverse City, MI
Print_ISBN :
978-1-4244-4695-7
Electronic_ISBN :
978-1-4244-4696-4
DOI :
10.1109/NMDC.2009.5167529
