Shunt-protected single-electron tunneling circuits fabricated on a quartz wafer

Author

Lotkhov, Sergey V. ; Camarota, Benedetta ; Scherer, Hansjörg ; Weimann, Thomas ; Hinze, Peter ; Zorin, Alexander B.

Author_Institution

Phys.-Tech. Bundesanstalt, Braunschweig, Germany

fYear

2009

fDate

2-5 June 2009

Firstpage

23

Lastpage

26

Abstract

We address fabrication challenges for the single-electron tunneling (SET) devices, based on ultrasmall junctions Al/AlO_x/Al. Nanoscale SET components are known to be very fragile in respect to electrostatic breakdown, which turns out to be a critical problem for devices, fabricated on insulating substrates. For the breakdown prevention, we successfully realized on-chip silicon shunts, whose conductivity advantageously vanished at low temperatures, making possible undisturbed SET operation at T ~ 100 mK.

Keywords

aluminium; aluminium compounds; electric breakdown; quartz; single electron devices; tunnelling; wafer-scale integration; Al-AlO_x-Al; electrostatic breakdown; on-chip silicon shunts; quartz wafer; shunt protected single electron tunneling circuits; ultrasmall junctions; Circuits; Conductivity; Electric breakdown; Electrostatics; Fabrication; Insulation; Nanoscale devices; Silicon; Temperature; Tunneling; Single-electron tunneling; electron charge; electron-beam lithography; low-permittivity substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE

Conference_Location

Traverse City, MI

Print_ISBN

978-1-4244-4695-7

Electronic_ISBN

978-1-4244-4696-4

Type

conf

DOI

10.1109/NMDC.2009.5167530

Filename

5167530