DocumentCode :
2578346
Title :
A stable backgated-type SnO22 nanowires field emitter for mass production
Author :
Guo, Tai-Liang ; Ma, Li-An ; Lin, Zhi-Xian ; Ye, Yun
Author_Institution :
Institutes of Optoelectron. & Displays Technol., Fuzhou Univ., Fuzhou, China
fYear :
2009
fDate :
2-5 June 2009
Firstpage :
84
Lastpage :
86
Abstract :
In this paper we report the fabrication and testing of backgated triode structure field emission (FED) devices with SnO2-nanowires-based cathodes. Field-emission measurement reveals that the SnO2-nanowires FED devices posses a good emission property with low turn-on voltage (~150 V), high emission current (~390 muA) and long-term emission stability.
Keywords :
IV-VI semiconductors; cathodes; field emission displays; nanoelectronics; nanowires; tin compounds; SnO2; backgated triode structure field emission devices; cathodes; nanowires field emitter; Boats; Cathodes; Furnaces; Materials science and technology; Nanowires; Powders; Scanning electron microscopy; Transmission electron microscopy; Voltage; X-ray scattering; Crystal growth; Field emission; Tin oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE
Conference_Location :
Traverse City, MI
Print_ISBN :
978-1-4244-4695-7
Electronic_ISBN :
978-1-4244-4696-4
Type :
conf
DOI :
10.1109/NMDC.2009.5167533
Filename :
5167533
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2578346
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