• DocumentCode
    2578346
  • Title

    A stable backgated-type SnO22 nanowires field emitter for mass production

  • Author

    Guo, Tai-Liang ; Ma, Li-An ; Lin, Zhi-Xian ; Ye, Yun

  • Author_Institution
    Institutes of Optoelectron. & Displays Technol., Fuzhou Univ., Fuzhou, China
  • fYear
    2009
  • fDate
    2-5 June 2009
  • Firstpage
    84
  • Lastpage
    86
  • Abstract
    In this paper we report the fabrication and testing of backgated triode structure field emission (FED) devices with SnO2-nanowires-based cathodes. Field-emission measurement reveals that the SnO2-nanowires FED devices posses a good emission property with low turn-on voltage (~150 V), high emission current (~390 muA) and long-term emission stability.
  • Keywords
    IV-VI semiconductors; cathodes; field emission displays; nanoelectronics; nanowires; tin compounds; SnO2; backgated triode structure field emission devices; cathodes; nanowires field emitter; Boats; Cathodes; Furnaces; Materials science and technology; Nanowires; Powders; Scanning electron microscopy; Transmission electron microscopy; Voltage; X-ray scattering; Crystal growth; Field emission; Tin oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE
  • Conference_Location
    Traverse City, MI
  • Print_ISBN
    978-1-4244-4695-7
  • Electronic_ISBN
    978-1-4244-4696-4
  • Type

    conf

  • DOI
    10.1109/NMDC.2009.5167533
  • Filename
    5167533
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2578346