• DocumentCode
    2578362
  • Title

    Characteristics of triangle and square InP/InGaAsP microlasers

  • Author

    Huang, Yong-Zhen ; Wang, Shi-Jiang ; Che, Kai-Jun ; Hu, Yong-Hong ; Du, Yun ; Yu, Li-Jun

  • Author_Institution
    State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing
  • Volume
    4
  • fYear
    2008
  • fDate
    22-26 June 2008
  • Firstpage
    238
  • Lastpage
    241
  • Abstract
    Directional emission triangle and square InGaAsP/InP lasers have been fabricated by standard photolithography, inductively coupled plasma etching technique combined with wet chemical etching process. In this article, the characteristics of the microcavity lasers are presented. For an equilateral triangle microcavity laser with the side length of 30 mum, we got the laser spectra fitted very well with the mode wavelength formulate up to the 8th transverse mode at room temperature. But the laser spectra are usually more complex than the formulae for the lasers, especially for the lasers with a smaller side length. For a square microcavity laser with side length of 20 mum, we observed the mode competition between the Fabry-Perot (FP) modes and whispering-gallery (WG) modes at 200 K. The output spectra below the threshold have the mode interval of FP modes with a large mode interval, and the laser spectra agree very well with the WG modes, which have mode interval less than the FP modes. The output spectra are dominated by the FP modes below the threshold, because the FP modes have a higher output coupling efficiency than the WG modes.
  • Keywords
    Fabry-Perot resonators; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser modes; microcavity lasers; whispering gallery modes; Fabry-Perot modes; InGaAsP-InP; InP/InGaAsP microlasers; equilateral triangle microcavity laser; laser spectra; square microcavity laser; temperature 200 K; wavelength 30 mum; whispering-gallery modes; Chemical lasers; Indium phosphide; Laser modes; Lithography; Microcavities; Optical coupling; Plasma applications; Plasma chemistry; Plasma properties; Wet etching; InGaAsP/InP; microcavity; semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Transparent Optical Networks, 2008. ICTON 2008. 10th Anniversary International Conference on
  • Conference_Location
    Athens
  • Print_ISBN
    978-1-4244-2625-6
  • Electronic_ISBN
    978-1-4244-2626-3
  • Type

    conf

  • DOI
    10.1109/ICTON.2008.4598779
  • Filename
    4598779