DocumentCode :
2578362
Title :
Characteristics of triangle and square InP/InGaAsP microlasers
Author :
Huang, Yong-Zhen ; Wang, Shi-Jiang ; Che, Kai-Jun ; Hu, Yong-Hong ; Du, Yun ; Yu, Li-Jun
Author_Institution :
State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing
Volume :
4
fYear :
2008
fDate :
22-26 June 2008
Firstpage :
238
Lastpage :
241
Abstract :
Directional emission triangle and square InGaAsP/InP lasers have been fabricated by standard photolithography, inductively coupled plasma etching technique combined with wet chemical etching process. In this article, the characteristics of the microcavity lasers are presented. For an equilateral triangle microcavity laser with the side length of 30 mum, we got the laser spectra fitted very well with the mode wavelength formulate up to the 8th transverse mode at room temperature. But the laser spectra are usually more complex than the formulae for the lasers, especially for the lasers with a smaller side length. For a square microcavity laser with side length of 20 mum, we observed the mode competition between the Fabry-Perot (FP) modes and whispering-gallery (WG) modes at 200 K. The output spectra below the threshold have the mode interval of FP modes with a large mode interval, and the laser spectra agree very well with the WG modes, which have mode interval less than the FP modes. The output spectra are dominated by the FP modes below the threshold, because the FP modes have a higher output coupling efficiency than the WG modes.
Keywords :
Fabry-Perot resonators; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser modes; microcavity lasers; whispering gallery modes; Fabry-Perot modes; InGaAsP-InP; InP/InGaAsP microlasers; equilateral triangle microcavity laser; laser spectra; square microcavity laser; temperature 200 K; wavelength 30 mum; whispering-gallery modes; Chemical lasers; Indium phosphide; Laser modes; Lithography; Microcavities; Optical coupling; Plasma applications; Plasma chemistry; Plasma properties; Wet etching; InGaAsP/InP; microcavity; semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Transparent Optical Networks, 2008. ICTON 2008. 10th Anniversary International Conference on
Conference_Location :
Athens
Print_ISBN :
978-1-4244-2625-6
Electronic_ISBN :
978-1-4244-2626-3
Type :
conf
DOI :
10.1109/ICTON.2008.4598779
Filename :
4598779
Link To Document :
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