Title :
Design considerations for tunneling MOSFETs based on staggered heterojunctions for ultra-low-power applications
Author :
Wang, Lingquan Dennis ; Asbeck, Peter
Author_Institution :
Univ. of California, La Jolla, CA, USA
Abstract :
This paper discusses key device design issues for ultra-low-power (0.3V) tunnel-injection nano-MOSFETs that incorporate staggered heterojunctions at the source-channel junction. Material choice, gate alignment, and doping strategy are found to be crucial to preserve essential performance features of a staggered-heterojunction TFET such as steep turn on, high on-state current drive and low off-state leakage.
Keywords :
MOSFET; semiconductor doping; doping; low off-state leakage; source-channel junction; tunnel-injection nano-MOSFETs; tunneling MOSFETs; Composite materials; Doping; FETs; Heterojunctions; Indium gallium arsenide; MOSFETs; Nanoscale devices; Tunneling; USA Councils; Voltage; device design; staggered heterojunction; tunneling FET; ultra-low-power FET;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE
Conference_Location :
Traverse City, MI
Print_ISBN :
978-1-4244-4695-7
Electronic_ISBN :
978-1-4244-4696-4
DOI :
10.1109/NMDC.2009.5167534
