DocumentCode :
257840
Title :
Peculiarities of recharging process Yb2+ → Yb3+ in Yb:Y3Al5O12 epitaxial films under high temperature oxidation
Author :
Martynyuk, N. ; Buryy, O. ; Ubizskii, S. ; Syvorotka, I. ; Becker, K.D.
Author_Institution :
Lviv Polytech. Nat. Univ., Lviv, Ukraine
fYear :
2014
fDate :
26-30 May 2014
Firstpage :
157
Lastpage :
158
Abstract :
In this communication we analyze the reasons for distinctions of Yb2+ → Yb3+ recharging processes taking place in Yb:Y3Al5O12 epitaxial films and bulk crystals under high temperature annealing. Influence of sample surface structure on the rate of oxidation process was found to be significant.
Keywords :
annealing; epitaxial layers; garnets; high-temperature effects; oxidation; surface structure; ytterbium; yttrium compounds; YAG:Yb; Yb2+-Yb3+ recharging process peculiarities; bulk crystals; epitaxial films; high temperature annealing; high temperature oxidation; sample surface structure; Epitaxial growth; Gold; Ultrafast optics; oxidation kinetic; recharging of ions; ytterbium; yttrium-aluminum garnet (YAG);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Oxide Materials for Electronic Engineering (OMEE), 2014 IEEE International Conference on
Conference_Location :
Lviv
Print_ISBN :
978-1-4799-5960-0
Type :
conf
DOI :
10.1109/OMEE.2014.6912387
Filename :
6912387
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=257840
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