Title :
Radiation hardened 64 K/256 K EEPROM technology
Author :
Williams, D. ; Adams, D. ; Bishop, R. ; Knoll, M. ; Murray, Jacob ; McClintock, R.
Author_Institution :
Northrop Grumman Corp., Baltimore, MD, USA
Abstract :
This paper summarizes the status of 64 K and 256 K radiation hardened EEPROM devices that are being produced for space and strategic applications at Northrop Grumman Corporation. These devices use Silicon-Oxide-Nitride-Oxide-Semiconductor (SONOS) technology which provides improved total dose radiation hardness over floating gate devices. Circuit design techniques provide good resistance to single event and transient radiation effects. Several CMOS/SONOS devices are being produced including an 8 K×8 EEPROM, a 32 K×8 EEPROM (in development), plus mixed mode ASICs. This technology has been demonstrated to have better than 10 year retention at 80°C after 10 4 programming cycles. The EEPROMs utilize a radiation hardened CMOS process technology currently specified at 300 Krad(Si) total dose hardness. Both n-channel and p-channel SONOS memory transistors are currently in use, but the EEPROMs are based on n-channel SONOS
Keywords :
CMOS memory circuits; EPROM; integrated circuit testing; radiation effects; radiation hardening (electronics); 10 year; 256 Kbit; 64 Kbit; 80 C; CMOS/SONOS devices; EEPROM technology; SONOS technology; SiO2-Si3N4-SiO2; circuit design techniques; mixed mode ASICs; n-channel SONOS memory transistors; radiation hardened CMOS process technology; radiation hardened EEPROM devices; single event radiation effects; space applications; strategic applications; total dose radiation hardness; transient radiation effects; Clocks; EPROM; Electron traps; Fuses; Nonvolatile memory; Radiation hardening; Redundancy; SONOS devices; Voltage; Writing;
Conference_Titel :
Nonvolatile Memory Technology Conference, 1996., Sixth Biennial IEEE International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-3510-4
DOI :
10.1109/NVMT.1996.534671
