Parallel scanning AFM with on-chip circuitry in CMOS technology

Author

Lange, D. ; Akiyama, T. ; Hagleitner, C. ; Tonin, A. ; Hidber, H.R. ; Niedermann, P. ; Staufer, U. ; de Rooij, N.F. ; Brand, O. ; Baltes, H.

Author_Institution

Phys. Electron. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland

fYear

1999

fDate

21-21 Jan. 1999

Firstpage

447

Lastpage

452

Abstract

We present the first force sensors for application in Atomic Force Microscopy (AFM) fabricated with industrial CMOS technology. Sensing is based on two different detection schemes: a piezoresistive Wheatstone bridge and stress-sensing MOS transistors. The system combines on a single chip (i) two cantilevers for parallel scanning, (ii) thermal actuators for independent deflection of the two cantilevers, (iii) sensors to measure the deflection, and (iv) offset compensation and signal conditioning circuitry. The AFM probes were tested in contact and dynamic mode. In the dynamic mode, images with a resolution of better than 20 /spl Aring/ were recorded. Moreover, we successfully took parallel scanning images in contact mode.

Keywords

CMOS integrated circuits; atomic force microscopy; force sensors; microsensors; piezoresistive devices; CMOS technology; MOS transistor; atomic force microscopy; cantilever deflection; contact mode; dynamic mode; force sensor; image resolution; offset compensation; on-chip circuitry; parallel scanning AFM probe; piezoresistive Wheatstone bridge; signal conditioning; thermal actuator; Actuators; Atomic force microscopy; Bridge circuits; CMOS technology; Force sensors; MOSFETs; Piezoresistance; Sensor systems; Textile industry; Thermal sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 1999. MEMS '99. Twelfth IEEE International Conference on

Conference_Location

Orlando, FL, USA

ISSN

1084-6999

Print_ISBN

0-7803-5194-0

Type

conf

DOI

10.1109/MEMSYS.1999.746870

Filename

746870