Title :
The impact of latent image quality on line edge roughness in electron beam lithography
Author :
Yoshizawa, M. ; Moriya, S. ; Nakano, H. ; Morita, T. ; Kitagawa, T. ; Miyamoto, Y.
Author_Institution :
Lithography Technol. Dept., Sony Corp., Atsugi, Japan
Abstract :
In this paper, LER of resist patterns is investigated using various EB lithography. LER strongly depended on latent image quality.
Keywords :
electron resists; masks; optical transfer function; electron beam lithography; latent image quality; line edge roughness; resist patterns; Chemicals; Electron beams; Fluctuations; Image quality; Lithography; Nanotechnology; Resists; Scanning electron microscopy; Semiconductor device manufacture; Semiconductor device noise;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268599
