DocumentCode
2578634
Title
The impact of latent image quality on line edge roughness in electron beam lithography
Author
Yoshizawa, M. ; Moriya, S. ; Nakano, H. ; Morita, T. ; Kitagawa, T. ; Miyamoto, Y.
Author_Institution
Lithography Technol. Dept., Sony Corp., Atsugi, Japan
fYear
2003
fDate
29-31 Oct. 2003
Firstpage
108
Lastpage
109
Abstract
In this paper, LER of resist patterns is investigated using various EB lithography. LER strongly depended on latent image quality.
Keywords
electron resists; masks; optical transfer function; electron beam lithography; latent image quality; line edge roughness; resist patterns; Chemicals; Electron beams; Fluctuations; Image quality; Lithography; Nanotechnology; Resists; Scanning electron microscopy; Semiconductor device manufacture; Semiconductor device noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-040-2
Type
conf
DOI
10.1109/IMNC.2003.1268599
Filename
1268599
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