DocumentCode
2578644
Title
Application of electron-beam illuminated low-k silicate to nanoscale interconnect technology
Author
Po-Tsun Liu ; Chang, T.C. ; Lin, Z.W. ; Tsai, T.M. ; Chen, C.W. ; Chen, B.C. ; Lee, J.K. ; Chen, G. ; Tsai, E. ; Chang, J.
Author_Institution
Nat. Nano Device Lab., Hsinchu, Taiwan
fYear
2003
fDate
29-31 Oct. 2003
Firstpage
110
Abstract
Summary form only given. In this paper, a direct patterning technology of non-photosensitive silicate based hydrogen silsesquioxane was investigated with electron beam lithography for IMD applications.
Keywords
Fourier transform spectra; copper; dielectric materials; dielectric thin films; electron beam lithography; hydrogen compounds; infrared spectra; integrated circuit interconnections; nanotechnology; organic compounds; permittivity; Cu; direct patterning technology; electron beam lithography; electron-beam illuminated low-k silicate; intermetal dielectrics; nanoscale interconnect technology; nonphotosensitive silicate based hydrogen silsesquioxane; Crosstalk; Dielectrics; Electron beams; Integrated circuit interconnections; Lithography; Nanoscale devices; Parasitic capacitance; Propagation delay;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-040-2
Type
conf
DOI
10.1109/IMNC.2003.1268600
Filename
1268600
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