• DocumentCode
    25787
  • Title

    A Low-Power 2.4-GHz Receiver Front End With a Lateral Current-Reusing Technique

  • Author

    Chao Chen ; Jianhui Wu ; Dan Huang ; Longxing Shi

  • Author_Institution
    Nat. ASIC Res. Center, Southeast Univ., Nanjing, China
  • Volume
    61
  • Issue
    8
  • fYear
    2014
  • fDate
    Aug. 2014
  • Firstpage
    564
  • Lastpage
    568
  • Abstract
    A 2.4-GHz current-reused receiver front end is presented in this brief. Instead of using the traditional stack-on current-reusing scheme that compresses the voltage headroom, the proposed front end employs a lateral current-shunt branch to share most of the dc bias current of the transconductance transistors in an LNA and a mixer. To prevent the signal interaction between the two modules, an LC tank is inserted into the current-reusing path to cut off the radio-frequency signal path between the LNA and the mixer. The IF signal blocking is realized by inserting a cascode transistor that provides large impedance for the IF signal from the mixer. Theory analysis and simulation results indicate that the current-reusing structure improves the noise performance and only a small impact on the voltage gain. A prototype of the proposed front end is designed and fabricated in the 130-nm CMOS process. Measurement results indicate that the front end achieved a conversion gain of 25 dB, a double-sideband noise figure of 3.5 dB, and a third-order input intercept point (IIP3) of -13 dBm at an input frequency of 2.4 GHz. The dc consumption of the front end is 3 mA under a supply voltage of 1.2 V.
  • Keywords
    LC circuits; receivers; transistors; CMOS process; DC bias current; IF signal blocking; LC tank; LNA; cascode transistor; current reused receiver front end; current reusing structure; double-sideband noise figure; frequency 2.4 GHz; lateral current reusing technique; lateral current shunt branch; mixer; radio frequency signal path; receiver front end; signal interaction; theory analysis; transconductance transistors; voltage gain; voltage headroom; Frequency measurement; Gain; Impedance; Mixers; Noise; Radio frequency; Transistors; Complimentary metal??oxide??semiconductor (CMOS); current reusing; low power consumption; radio frequency (RF) front end; receiver;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems II: Express Briefs, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-7747
  • Type

    jour

  • DOI
    10.1109/TCSII.2014.2327344
  • Filename
    6823101