Title :
Observation of ultraviolet and visible luminescence due to the presence of defect states in the forbidden bandgap of tin oxide nanowires.
Author :
Kar, Ayan ; Stroscio, Michael A. ; Dutta, Mitra ; Kumari, Jyoti ; Meyyappan, M.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Illinois, Chicago, IL, USA
Abstract :
Orange and Ultraviolet (UV) luminescence has been obtained from vapor-liquid-solid grown SnO2 nanowires. The orange luminescence was found to be originating from the defect states in the forbidden bandgap and shows dependence on the nanowire diameter. Annealing of the nanowires under various conditions also seems to have an effect on their optical properties [1, 6]. Finally the origin of the UV luminescence has been investigated from which the donor and acceptor binding energies have been calculated.
Keywords :
annealing; binding energy; defect states; impurity states; nanowires; photoluminescence; semiconductor materials; semiconductor quantum wires; tin compounds; SnO2; acceptor; annealing; binding energies; defect states; donor; forbidden bandgap; optical properties; tin oxide nanowires; ultraviolet luminescence spectra; vapor-liquid-solid growth; visible luminescence spectra; Luminescence; Nanowires; Photonic band gap; Tin; Nanowires; Photoluminescence; TEM; Ultraviolet and Defect states;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE
Conference_Location :
Traverse City, MI
Print_ISBN :
978-1-4244-4695-7
Electronic_ISBN :
978-1-4244-4696-4
DOI :
10.1109/NMDC.2009.5167552
