Title :
Structural and electro-physical properties of ZnO films, obtained by nonvacuum chemical method
Author :
Avramenko, K.A. ; Roshchina, N.N. ; Olkhovik, G.P. ; Smertenko, P.S. ; Zavyalova, L.V.
Author_Institution :
V. Lashkaryov Inst. of Semicond. Phys., Kiev, Ukraine
Abstract :
This paper reports on the ZnO film structures obtained by MOCVD method from acetylacetonate of zinc on silicon substrates at 280-320 °C substrate. The structural, emitting and transport properties of the ZnO films were examined by X-ray diffraction, Scanning electronic microscopy, Photoluminescent microscopy and Current-Voltage methods. The electrical transport mechanisms were analyzed on the base of differential and injection approaches. The ZnO/Si structure with ZnO film obtained was found to be appropriate for use in electronic devices due to their structural and electrical properties.
Keywords :
II-VI semiconductors; MOCVD; X-ray diffraction; electrical conductivity; photoluminescence; scanning electron microscopy; semiconductor growth; semiconductor thin films; wide band gap semiconductors; zinc compounds; MOCVD; Si; X-ray diffraction; ZnO; acetylacetonate; current-voltage method; electrical transport; electro-physical properties; electronic devices; emitting properties; film structure; nonvacuum chemical method; photoluminescent microscopy; scanning electronic microscopy; silicon substrates; structural properties; temperature 280 degC to 320 degC; transport properties; Atmospheric measurements; Glass; MOCVD; Molecular beam epitaxial growth; Scanning electron microscopy; Substrates; ZnO/Si heterojunction; current-voltage characteristics; metaloorganic chemical vapour deposition;
Conference_Titel :
Oxide Materials for Electronic Engineering (OMEE), 2014 IEEE International Conference on
Conference_Location :
Lviv
Print_ISBN :
978-1-4799-5960-0
DOI :
10.1109/OMEE.2014.6912401
