Title :
Uniformity And Reliability Of 1.5 nm Direct Tunneling Gate Oxide MOSFETs
Author :
Momose, H.S. ; Nakamura, S. ; Ohguro, T. ; Yoshitomi, T. ; Morifuji, E. ; Nforimoto ; Katsumata, Y. ; Iwai, H.
Author_Institution :
Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
Conference_Titel :
VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on
Print_ISBN :
4-930813-75-1
DOI :
10.1109/VLSIT.1997.623672
