DocumentCode
2578806
Title
A Novel 1b Trench DRAM Cell With Raised Shallow Trench Isolation (RSTI)
Author
Alsmeier, J. ; Kelleher, K.H. ; Beintner, J. ; Haensch, W. ; Mandelman, J.A. ; Hoh, P. ; Ninomiya, Y.L. ; Srinivasan, S. ; Bronner, G.
Author_Institution
Siemens Components Inc
fYear
1997
fDate
10-12 June 1997
Firstpage
19
Lastpage
20
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on
Print_ISBN
4-930813-75-1
Type
conf
DOI
10.1109/VLSIT.1997.623674
Filename
623674
Link To Document