• DocumentCode
    2578815
  • Title

    Fully Planarized Stacked Capacitor Cell With Deep And High Aspect Ratio Contact Hole For Gigs-bit DRAM

  • Author

    Itabashi, K. ; Tsuboi, S. ; Nakamura, H. ; Hashimoto, K. ; Futoh, W. ; Fukuda, K. ; Hanyu, I. ; Asai, S. ; Chijimatsu ; Kawamura, E. ; Yao, T. ; Takagi, H. ; Ohta, Y. ; Karasawa, T. ; Iio, H. ; Onods ; Inoue, F. ; Nomura, H. ; Satoh, Y. ; Higashimoto, M.

  • Author_Institution
    Fujitsu Ltd., 4-1-1, Kamikodanaka, Nakahara-ku, Kawasaki 211-88, Japan
  • fYear
    1997
  • fDate
    10-12 June 1997
  • Firstpage
    21
  • Lastpage
    22
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on
  • Print_ISBN
    4-930813-75-1
  • Type

    conf

  • DOI
    10.1109/VLSIT.1997.623675
  • Filename
    623675
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2578815