Title :
Outgassed species from 157-nm-irradiated triphenylsulfonium salts
Author :
Matsui, Y. ; Seki, S. ; Tagawa, S. ; Irie, So ; Itani, T.
Author_Institution :
Inst. of Sci. & Ind. Res., Osaka Univ., Ibaragi, Japan
Abstract :
Resist outgassing during exposure is a problem in 157 nm lithography because outgassed species from irradiated resists deposit on optical elements and degrade their transmission. In this paper, outgassed species from typical triphenylsulfonium salt with different counter ions were investigated using in situ quadrupole mass spectrometry.
Keywords :
mass spectroscopic chemical analysis; organic compounds; outgassing; ultraviolet lithography; 157 nm; counter ions; irradiation; lithography; optical elements; quadrupole mass spectrometry; resist outgassing; triphenylsulfonium salts; Counting circuits; Degradation; Lithography; Mass spectroscopy; Particle beam optics; Resists;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268609
