Title :
Manufacturable process for Si-SET fabrication
Author :
Joshi, Vishwanath ; Lee, Yen-Chun ; Orlov, Alexei O. ; Snider, Gregory L.
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
In this report, we describe the fabrication and experimental demonstration of Si single-electron transistor. The CMOS compatible process flow uses lithography, dry etching and chemical mechanical polishing. The fabricated device showed Coulomb blockade oscillations well above 150 K.
Keywords :
CMOS integrated circuits; Coulomb blockade; chemical mechanical polishing; elemental semiconductors; etching; lithography; silicon; single electron transistors; CMOS compatible process; Coulomb blockade oscillation; Si; Si-SET fabrication; chemical mechanical polishing; dry etching; lithography; manufacturable process; single-electron transistor; CMOS process; Dry etching; Fabrication; Lithography; Manufacturing processes; Plasma temperature; Rough surfaces; Single electron transistors; Surface roughness; Temperature control;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE
Conference_Location :
Traverse City, MI
Print_ISBN :
978-1-4244-4695-7
Electronic_ISBN :
978-1-4244-4696-4
DOI :
10.1109/NMDC.2009.5167564
