Title :
A micromechanical switch as the logic elements for circuits in multi chip module on Si (MCM-Si)
Author :
Hirata, A. ; Machida, K. ; Kyuragi, H. ; Maeda, M.
Author_Institution :
NTT Syst. Electron. Lab., Kanagawa, Japan
Abstract :
An electrostatic micromechanical switch for logic elements that can conduct a single logic operation with only one switch is proposed. The actuation voltage of this switch is reduced to 15 V even though its area is 60/spl times/70 /spl mu/m/sup 2/, and this is achieved by placing narrow beams symmetrically on a multi chip module on Si (MCM-Si). The on-resistance of this switch is 5 /spl Omega/, its off-resistance is over 10/sup 10/ /spl Omega/, and its maximum switching frequency is 10 kHz This switch has two driving inputs, and its switching can be controlled by the number of driving inputs that are "High". By adjusting the beam elastic force, we made two types of switches which operate "AND" or "OR" logic at the same driving voltage. Compact logic circuits for a MCM-Si can be obtained by using these switches.
Keywords :
electrostatic actuators; elemental semiconductors; logic circuits; logic gates; micromachining; multichip modules; semiconductor switches; silicon; 10/sup 10/ ohm; 15 V; 5 ohm; 60 micron; 70 micron; AND logic; MCM on Si; OR logic; Si; actuation voltage; beam elastic force; compact logic circuits; controlled switching; electrostatic micromechanical switch; equivalent circuit; fabrication; fixed driving electrode; logic elements; maximum switching frequency; movable contact electrodes; narrow beams; number of driving inputs; off-resistance; on-resistance; single logic operation; switch design; symmetrically placed beams; Circuit testing; Contacts; Electrodes; Electrostatics; Integrated circuit interconnections; Logic circuits; Micromechanical devices; Switches; Switching circuits; Voltage;
Conference_Titel :
Micro Electro Mechanical Systems, 1999. MEMS '99. Twelfth IEEE International Conference on
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-5194-0
DOI :
10.1109/MEMSYS.1999.746893
