DocumentCode
2578934
Title
Nanoimprint mold repair by Ga/sup +/ focused-ion-beam
Author
Watanabe, Keiichiro ; Morita, Takahiko ; Kometani, Reo ; Kanda, Kazuhiro ; Haruyama, Yuichi ; Kaito, Takashi ; Matsui, Shinji
Author_Institution
Graduate Sch. of Sci., Himeji Inst. of Technol., Hyogo, Japan
fYear
2003
fDate
29-31 Oct. 2003
Firstpage
144
Lastpage
145
Abstract
We present a nanoimprint lithography (NIL) Si mold repair by Ga focussed ion beam (FIB). From the results, we conclude that a Si mold with projection and hollow defects can be repaired by Ga/sup +/ FIB. Ga appearance on a Si mold surface was clearly observed in NIL at over around 150 /spl deg/C.
Keywords
chemical vapour deposition; elemental semiconductors; focused ion beam technology; moulding; nanolithography; silicon; sputter etching; 30 kV; Ga; Ga/sup +/ focused-ion-beam technology; Si; chemical vapour deposition; etching; nanoimprint Si mold repair; Chemical vapor deposition; Dry etching; Electron beams; Glass; Instruments; Lithography; Resists; Shape; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-040-2
Type
conf
DOI
10.1109/IMNC.2003.1268617
Filename
1268617
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