Growth of thick epitaxial Bi-substituted iron garnet films with large diameter

Author

Syvorotka, Ihor I. ; Syvorotka, Ihor M. ; Ubizskii, S.B. ; Kumar, Pranaw ; Prabhakar, A.

Author_Institution

R&D Inst. of Mater., SRC Carat, Lviv, Ukraine

fYear

2014

fDate

26-30 May 2014

Firstpage

201

Lastpage

202

Abstract

The 3 inch in diameter (TmBi)₃(FeGa)₅O₁₂ epitaxial films with thickness up to 60 μm were grown by liquid phase epitaxy method. The Bi₂O₃, Bi₂O₃-B₂O₃, Bi₂O₃-B₂O₃-Na₂O and Bi₂O₃-B₂O₃-CeO₂ fluxes were used. The conditions of orthoferrite and garnet primary phase crystallization and optimal growth strategy were determined. It was found that the surface morphology strongly depends from film-substrate lattice mismatch. All films with mirror surface demonstrate high Faraday rotation and low saturation magnetization which are suitable for magneto-optic applications.

Keywords

Faraday effect; bismuth compounds; crystallisation; garnets; liquid phase epitaxial growth; magnetic epitaxial layers; magnetisation; surface morphology; thulium compounds; (TmBi)₃(FeGa)₅O₁₂; Faraday rotation; film-substrate lattice mismatch; liquid phase epitaxy method; magnetooptic applications; mirror surface; optimal growth strategy; orthoferrite; primary phase crystallization; saturation magnetization; surface morphology; thick epitaxial Bi-substituted iron garnet film growth; Epitaxial growth; Ferrites; Garnets; Magnetic films; Saturation magnetization; Temperature dependence; Bi-doped iron garnet; Faraday rotation; liquid phase epitaxy; magneto-optic films;

fLanguage

English

Publisher

ieee

Conference_Titel

Oxide Materials for Electronic Engineering (OMEE), 2014 IEEE International Conference on

Conference_Location

Lviv

Print_ISBN

978-1-4799-5960-0

Type

conf

DOI

10.1109/OMEE.2014.6912412

Filename

6912412