DocumentCode :
2578969
Title :
A high sensitivity capacitive microaccelerometer with a folded-electrode structure
Author :
Yazdi, N. ; Salian, A. ; Najafi, K.
Author_Institution :
Center for Integrated Microsyst., Michigan Univ., Ann Arbor, MI, USA
fYear :
1999
fDate :
21-21 Jan. 1999
Firstpage :
600
Lastpage :
605
Abstract :
A high sensitivity capacitive silicon accelerometer with a new device structure is presented. The structure uses a fixed rigid electrode suspended between a proof mass and a stiff moving electrode to provide differential capacitance measurement and force-rebalancing. High sensitivity is achieved by forming a thick silicon proof mass and a narrow uniform air gap over a large area. The mechanical noise floor is reduced by incorporating damping holes in the electrodes. The measured sensitivity for a device with 2.6 mm/spl times/1 mm proof mass and 1.4 /spl mu/m air gap is /spl ap/100 pF/g. The calculated mechanical noise floor for the same device is 0.18 /spl mu///spl radic/Hz at atmosphere.
Keywords :
accelerometers; capacitive sensors; elemental semiconductors; microelectrodes; micromachining; microsensors; semiconductor device noise; silicon; Si; capacitive microaccelerometer; closed loop operation; damping holes; differential capacitance measurement; fabrication; fixed rigid electrode; folded-electrode structure; force-rebalancing; high sensitivity; narrow uniform air gap; proof mass; reduced mechanical noise floor; stiff moving electrode; suspended electrode; Accelerometers; Atmospheric measurements; Bandwidth; Capacitance measurement; Damping; Electrodes; Fabrication; Noise reduction; Silicon; Solid state circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 1999. MEMS '99. Twelfth IEEE International Conference on
Conference_Location :
Orlando, FL, USA
ISSN :
1084-6999
Print_ISBN :
0-7803-5194-0
Type :
conf
DOI :
10.1109/MEMSYS.1999.746896
Filename :
746896
Link To Document :
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