DocumentCode
2578993
Title
A lateral capacitive CMOS accelerometer with structural curl compensation
Author
Gang Zhang ; Huikai Xie ; de Rosset, L.E. ; Fedder, G.K.
Author_Institution
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
fYear
1999
fDate
21-21 Jan. 1999
Firstpage
606
Lastpage
611
Abstract
We present successful experimental results from the first lateral capacitive accelerometer to be designed and manufactured in a conventional CMOS process. Compatibility with conventional CMOS provides advantages of low cost, high yield and fast prototyping that should be transferable to any CMOS foundry. A fully differential capacitive-bridge interface which cannot be realized in polysilicon technology is designed and implemented. Out-of-plane curling associated with the composite structural layers is compensated to first order through a curl matching technique. The prototype accelerometer has a measured sensitivity of 1.2 mV/g and a 0.5 mg//spl radic/Hz noise floor at the output of the sensing element.
Keywords
CMOS integrated circuits; accelerometers; bridge circuits; capacitive sensors; compensation; micromachining; microsensors; sputter etching; anisotropic RIE; conventional CMOS compatibility; curl matching technique; fast prototyping; fully differential capacitive-bridge interface; high yield; lateral capacitive CMOS accelerometer; low cost; micromachining; noise floor; out-of-plane curling; sensitivity; structural curl compensation; Accelerometers; CMOS process; CMOS technology; Costs; Etching; Micromachining; Microstructure; Parasitic capacitance; Prototypes; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 1999. MEMS '99. Twelfth IEEE International Conference on
Conference_Location
Orlando, FL, USA
ISSN
1084-6999
Print_ISBN
0-7803-5194-0
Type
conf
DOI
10.1109/MEMSYS.1999.746897
Filename
746897
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