Title :
A lateral capacitive CMOS accelerometer with structural curl compensation
Author :
Gang Zhang ; Huikai Xie ; de Rosset, L.E. ; Fedder, G.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
Abstract :
We present successful experimental results from the first lateral capacitive accelerometer to be designed and manufactured in a conventional CMOS process. Compatibility with conventional CMOS provides advantages of low cost, high yield and fast prototyping that should be transferable to any CMOS foundry. A fully differential capacitive-bridge interface which cannot be realized in polysilicon technology is designed and implemented. Out-of-plane curling associated with the composite structural layers is compensated to first order through a curl matching technique. The prototype accelerometer has a measured sensitivity of 1.2 mV/g and a 0.5 mg//spl radic/Hz noise floor at the output of the sensing element.
Keywords :
CMOS integrated circuits; accelerometers; bridge circuits; capacitive sensors; compensation; micromachining; microsensors; sputter etching; anisotropic RIE; conventional CMOS compatibility; curl matching technique; fast prototyping; fully differential capacitive-bridge interface; high yield; lateral capacitive CMOS accelerometer; low cost; micromachining; noise floor; out-of-plane curling; sensitivity; structural curl compensation; Accelerometers; CMOS process; CMOS technology; Costs; Etching; Micromachining; Microstructure; Parasitic capacitance; Prototypes; Silicon;
Conference_Titel :
Micro Electro Mechanical Systems, 1999. MEMS '99. Twelfth IEEE International Conference on
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-5194-0
DOI :
10.1109/MEMSYS.1999.746897