Title :
Applications of germanium to low temperature micro-machining
Author :
Biao Li ; Bin Xiong ; Linan Jiang ; Yitshak Zohar ; Man Wong
Author_Institution :
Dept. of Mech. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
Abstract :
Though germanium (Ge) shares similar physical properties with silicon (Si), it also possesses unique characteristics that are complementary to those of Si. The advantages of Ge include its compatibility with Si micro-fabrication, its excellent gas and liquid phase etch selectivity to other materials commonly used in Si micro-machining, and particularly its low deposition temperature (<350/spl deg/C) which allows Ge to be used after the completion of a standard CMOS run. Clearly, wider applications of Ge as structural, sacrificial, and sensor material require a more systematic investigation of its processing and properties. In this report, the results of a systematic investigation of the use of Ge in MEMS are presented.
Keywords :
Raman spectra; X-ray diffraction; chemical vapour deposition; elemental semiconductors; etching; germanium; internal stresses; micromachining; micromechanical devices; rapid thermal annealing; scanning electron microscopy; semiconductor growth; semiconductor thin films; Ge; LPCVD; MEMS structural material; RTA; SEM; XRD spectra; compatibility with Si microfabrication; gas phase etch selectivity; liquid phase etch selectivity; low deposition temperature; low temperature micromachining; micro-Raman spectra; polycrystalline films; residual stress; sacrificial material; scaling; sensor material; single crystal films; Circuits; Etching; Fabrication; Germanium; Micromechanical devices; Residual stresses; Semiconductor materials; Sputtering; Temperature; Transistors;
Conference_Titel :
Micro Electro Mechanical Systems, 1999. MEMS '99. Twelfth IEEE International Conference on
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-5194-0
DOI :
10.1109/MEMSYS.1999.746902