Title :
Microwave performance of surface channel diamond MESFETs
Author :
Calvani, P. ; Corsaro, A. ; Sinisi, F. ; Rossi, M.C. ; Conte, G. ; Carta, S. ; Limiti, E.
Author_Institution :
Electron. Eng. Dept., Univ. of Roma Tre, Rome, Italy
Abstract :
Sub-micron gate length Metal Semiconductor Field Effect Transistors (MESFETs) have been realized on polycrystalline diamond samples supplied by Element Six Ltd. and by Russian Academy of Science. RF performances are shown for devices realized on polycrystalline diamond samples of different quality, stating the successfully improvement and reliability of realization technology.
Keywords :
Schottky gate field effect transistors; diamond; C; metal semiconductor field effect transistors; microwave performance; polycrystalline diamond samples; submicron gate; surface channel diamond MESFET; Electric breakdown; FETs; Grain size; Hydrogen; Laser radar; MESFETs; Plasma temperature; Surface treatment; Thermal conductivity; Vacuum breakdown;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE
Conference_Location :
Traverse City, MI
Print_ISBN :
978-1-4244-4695-7
Electronic_ISBN :
978-1-4244-4696-4
DOI :
10.1109/NMDC.2009.5167575
