Title :
Piezoresistive sensor technology for RFMEMS using p-type polycrystalline diamond
Author :
Cao, Zongliang ; Aslam, Dean
Author_Institution :
Electr. & Comput. Eng. Dept., Michigan State Univ., Lansing, MI, USA
Abstract :
Design, simulation, fabrication and testing of p-type polycrystalline diamond (poly-C) piezoresistive RFMEMS is reported for the first time. The use piezoresistive detection in RFMEMS can lead to an output impedance in the ranges of 20 - 500 Omega and several MOmega for intra- and inter-grain piezoresistors, respectively. The inter-grain gauge factor of the poly-C film with a resistivity of 22 Omega ldr cm was estimated to be over 20. An Ohmic contact with a contact resistance of 5.21 MOmega was achieved by using a highly-doped poly-C interlayer between metal and lightly-doped piezoresistor.
Keywords :
contact resistance; diamond; electrical resistivity; elemental semiconductors; micromechanical devices; ohmic contacts; piezoresistive devices; semiconductor doping; semiconductor thin films; C:Jk; Ohmic contact; contact resistance; doping; gauge factor; inter-grain piezoresistors; intra-grain piezoresistors; output impedance; p-type polycrystalline diamond; piezoresistive detection; piezoresistive sensor technology; radio frequency micro electro mechanical systems; resistance 20 ohm to 500 ohm; resistance 5.21 Mohm; resistivity; thin films; Capacitive sensors; Chemical sensors; Chemical vapor deposition; Conductivity; Frequency; Grain boundaries; Impedance; Micromechanical devices; Piezoresistance; Temperature sensors;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE
Conference_Location :
Traverse City, MI
Print_ISBN :
978-1-4244-4695-7
Electronic_ISBN :
978-1-4244-4696-4
DOI :
10.1109/NMDC.2009.5167579
