Title :
Characteristics and modeling of a non-planar and non-rectangular MOSFET for charge sensing in the Si micro-fluidic channel
Author :
Hong-Kun Lyu ; Dong-Sun Kim ; Hey-Jung Park ; Hwan-Mok Jung ; Jang-Kyoo Shin ; Pyung Choi ; Jong-Hyun Lee ; Minho Lee ; Geunbae Lim
Author_Institution :
Sch. of Electron. & Electr. Eng., Kyungpook Nat. Univ., Daegu, South Korea
Abstract :
In this paper, a non-planar and non-rectangular MOSFET having asymmetrical channel structure has been modeled based on Schwartz-Christoffel transformation and electrical characteristics of the fabricated 3D MOSFET were measured.
Keywords :
MOSFET; elemental semiconductors; microfluidics; semiconductor device models; silicon; Schwartz-Christoffel transformation; Si; Si microfluidic channel; channel structure; charge sensing; electrical properties; nonplanar MOSFET; nonrectangular MOSFET; Anisotropic magnetoresistance; Biosensors; Current measurement; Electric variables; Electric variables measurement; Etching; MOSFET circuits; SPICE; Sensor phenomena and characterization; Silicon;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268637
