Title :
Exact inductive parasitic extraction for analysis of IGBT parallel switching including DCB-backside eddy currents
Author :
Gutsmann, B. ; Mourick, P. ; Silber, D.
Author_Institution :
Inst. for Electr. Drives, Bremen Univ., Germany
Abstract :
This paper deals with the parallel switching process of IGBTs in a power module. It is shown experimentally and by simulation that eddy currents in the direct copper bonding (DCB) ceramics backside metallization have an important influence on switching behaviour. An effective simulation tool based on the partial element equivalent circuit (PEEC) method is used to extract all inductive couplings for circuit modeling
Keywords :
bipolar transistor switches; eddy currents; equivalent circuits; insulated gate bipolar transistors; power bipolar transistors; power convertors; power semiconductor switches; semiconductor device measurement; semiconductor device metallisation; semiconductor device models; semiconductor device testing; switching circuits; IGBT parallel switching; circuit modeling; direct copper bonding ceramics backside metallization; eddy currents; exact inductive parasitic extraction; inductive couplings; partial element equivalent circuit method; power module; simulation tool; switching behaviour; Bonding; Ceramics; Circuit simulation; Copper; Coupling circuits; Eddy currents; Equivalent circuits; Insulated gate bipolar transistors; Metallization; Multichip modules;
Conference_Titel :
Power Electronics Specialists Conference, 2000. PESC 00. 2000 IEEE 31st Annual
Conference_Location :
Galway
Print_ISBN :
0-7803-5692-6
DOI :
10.1109/PESC.2000.880496
