Title :
The multilayer silicon nitride films as a media for charge storage in MNOS structures
Author :
Evtukh, AA ; Litovchenko, V.G. ; Popov, V.G.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
Charge storage in multilayer silicon nitride films of MNOS structures is investigated and compared with homogeneous films. Multilayer silicon nitride films were synthesized using nonmonotonical step changing of the NH3 to SiCl4 ratio during deposition. The energy bandgap of Si3N4 and energy barrier heights for electrons and holes change appreciably, depending on the reactive component ratio. In forming the multilayer silicon nitride films we created a graded bandgap insulator with energy wells and barriers. This allows the current transport and distribution of stored charge in the insulator of MNOS structures
Keywords :
CVD coatings; MIS devices; MIS structures; chemical vapour deposition; electric charge; energy gap; insulating thin films; semiconductor storage; silicon compounds; MNOS structures; NH3; Si3N4; SiCl4; charge storage; deposition; energy barrier; energy wells; graded bandgap insulator; multilayer films; nonmonotonical step changing; reactive component ratio; Artificial intelligence; Charge carrier processes; Charge carriers; Electrodes; Energy barrier; Nonhomogeneous media; Nonvolatile memory; Semiconductor films; Silicon; Voltage;
Conference_Titel :
Nonvolatile Memory Technology Conference, 1996., Sixth Biennial IEEE International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-3510-4
DOI :
10.1109/NVMT.1996.534677
