Title :
Ratio of phosphorescence and thermally-stimulated luminescence intensities to stationary X-ray luminescence intensity
Author :
Pavlova, N.Yu. ; Degoda, V.Ya. ; Podust, G.P.
Author_Institution :
Nat. Pedagogical Dragomanov Univ., Kiev, Ukraine
Abstract :
Comparative analysis of the experimental results of X-ray luminescence, phosphorescence and thermally-stimulated luminescence intensities for different emission bands in ZnSe revealed that for 630 nm luminescence centers there are two recombination mechanisms existing - electron and hole.
Keywords :
II-VI semiconductors; electron-hole recombination; phosphorescence; stimulated emission; wide band gap semiconductors; zinc compounds; ZnSe; comparative analysis; electron-hole recombination mechanisms; emission bands; luminescence centers; phosphorescence; stationary X-ray luminescence intensity; thermally-stimulated luminescence intensities; wavelength 630 nm; Luminescence; X-ray luminescence; phosphorescence; thermally-stimulated luminescence and conductivity;
Conference_Titel :
Oxide Materials for Electronic Engineering (OMEE), 2014 IEEE International Conference on
Conference_Location :
Lviv
Print_ISBN :
978-1-4799-5960-0
DOI :
10.1109/OMEE.2014.6912443
