Title :
An Advanced 2.5nm Oxidized Nitride Gate Dielectric For Highly Reliable 0.25/spl mu/m MOSFETs
Author :
Yamamoto, T. ; Ogura, T. ; Saito, Y. ; Uwasawa, K. ; Tatsumi, T. ; Mogami, T.
Author_Institution :
Microelectronics Research Laboratories, NEC Corporation 1120 Shimokuzawa, Saganihara, Kanagawa 229, Japan
Conference_Titel :
VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on
Print_ISBN :
4-930813-75-1
DOI :
10.1109/VLSIT.1997.623687
