Title :
Design optimisation of a new active resonant snubber for high power IGBT converters
Author :
Combrink, F.W. ; de T.Mouton, H. ; Enslin, J.H.R.
Author_Institution :
Dept. of Electr. & Electron. Eng., Stellenbosch Univ., South Africa
Abstract :
In this paper a design optimisation procedure for a new active resonant snubber topology, specifically suited for high power IGBT converters, is introduced. After the basic operation principles and certain implementation consideration are discussed, the optimisation strategy, based on an analytical loss evaluation, is described. Experimental results obtained on an IGBT phase-arm fitted with an optimally designed snubber are presented
Keywords :
insulated gate bipolar transistors; losses; power convertors; resonant power convertors; snubbers; IGBT phase-arm; active resonant snubber; analytical loss evaluation; design optimisation procedure; high power IGBT converters; operation principles; optimally designed snubber; Circuit topology; Design optimization; Insulated gate bipolar transistors; Resonance; Snubbers; Switches; Switching circuits; Switching converters; Switching frequency; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 2000. PESC 00. 2000 IEEE 31st Annual
Conference_Location :
Galway
Print_ISBN :
0-7803-5692-6
DOI :
10.1109/PESC.2000.880524
