Title :
A 0.18/spl mu/m CMOS Process Using Nitrogen Profile-engineered Gate Dielectrics
Author :
Grider, D.T. ; Hattangady ; Kraft ; Nicollian, P.E. ; Kuehne, J. ; Brown, G. ; Aur, S. ; Eklund, R.H. ; Pas, M.F. ; Hunter, W.R. ; Douglas, M.
Author_Institution :
Semiconductor Process and Device Center and *Materials Science Laboratory Texas Instruments, Inc., P.O. Box 655012, Dallas, TX 75265
Conference_Titel :
VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on
Print_ISBN :
4-930813-75-1
DOI :
10.1109/VLSIT.1997.623688
