DocumentCode
2579992
Title
Research of microwave-bandwidth p-i-n photodetectors
Author
Belkin, Mikhail E. ; Dzichkovski, Nikolai A.
Author_Institution
Moscow State Tech. Univ. of Radio-Eng., Electron. & Autom., Moscow, Russia
fYear
2009
fDate
18-23 May 2009
Firstpage
174
Lastpage
177
Abstract
The methodology and results of the technology CAD followed by electronic CAD simulations for p-i-n photodiodes with microwave bandwidth are highlighted. Experimental verification results are also presented.
Keywords
microwave photonics; p-i-n photodiodes; photodetectors; technology CAD (electronics); electronic CAD simulations; microwave-bandwidth; p-i-n photodetectors; photodiodes; Absorption; Bandwidth; Circuit simulation; Computational modeling; Design automation; Doping; Indium phosphide; Microwave theory and techniques; PIN photodiodes; Photodetectors; Computer-aided design; p-i-n photodiode;
fLanguage
English
Publisher
ieee
Conference_Titel
EUROCON 2009, EUROCON '09. IEEE
Conference_Location
St.-Petersburg
Print_ISBN
978-1-4244-3860-0
Electronic_ISBN
978-1-4244-3861-7
Type
conf
DOI
10.1109/EURCON.2009.5167626
Filename
5167626
Link To Document