Title :
Performance characterization of MOS and bipolar devices for the development of efficient and reliable electronic ballast
Author :
Mulay, Amit ; Shenai, Krishna
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
Abstract :
For increasing the efficiency of operation and improving the reliability, a suitable semiconductor device must be chosen for a ballast application to ensure minimum power dissipation. With extensive measurements and 2-D simulations, a careful trade-off is made between MOS and bipolar devices to establish guidelines for choosing semiconductor devices for next generation monolithic solid-state ballasts, as well as for high power rating ballasts
Keywords :
insulated gate bipolar transistors; lamp accessories; power MOSFET; power bipolar transistors; reliability; 2-D simulations; IGBT; MOS devices; bipolar devices; high power rating ballasts; minimum power dissipation; monolithic solid-state ballasts; operation efficiency; power MOSFET; reliability improvement; reliable electronic ballast; semiconductor device; Costs; Electronic ballasts; Frequency; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Power dissipation; RLC circuits; Resonance; Semiconductor devices;
Conference_Titel :
Power Electronics Specialists Conference, 2000. PESC 00. 2000 IEEE 31st Annual
Conference_Location :
Galway
Print_ISBN :
0-7803-5692-6
DOI :
10.1109/PESC.2000.880544
