DocumentCode
2580090
Title
Influence of gate internal impedance on losses in a power MOS transistor switching at a high frequency in the ZVS mode
Author
Lefebvre, Stéphane ; Costa, François ; Miserey, Francis
Author_Institution
LESIR, ENS de Cachan, France
Volume
3
fYear
2000
fDate
2000
Firstpage
1606
Abstract
In order to use a power MOS transistor in the ZVS mode at high switching frequencies, the output capacitance has to be maximal and the input capacitance minimal. These characteristics available in the datasheets have to be completed if necessary to choose the ideal transistor for application with minimal losses, and additional characterisations have to be realised in order to specify or complete the datasheets. In particular, it is necessary to be sure that all the cells of the MOS transistor can be opened in a short time before the voltage rise time at turn-off, in order to reduce as low as possible turn-off losses. The paper points out that the gate to source impedance characterises the ability of the device to turn-off very quickly and it is useful to choose a MOS transistor having minimal losses in very high switching frequency ZVS applications
Keywords
capacitance; electric impedance; losses; power MOSFET; resonant power convertors; switching circuits; MOS transistor cells; ZVS; gate internal impedance; gate to source impedance; high frequency switching; input capacitance; losses; minimal losses; output capacitance; power MOS transistor; resonant converters; turn-off losses reduction; voltage rise time; Capacitance; Choppers; Diodes; Electrical resistance measurement; Impedance; MOSFETs; Resonance; Switching frequency; Testing; Zero voltage switching;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 2000. PESC 00. 2000 IEEE 31st Annual
Conference_Location
Galway
ISSN
0275-9306
Print_ISBN
0-7803-5692-6
Type
conf
DOI
10.1109/PESC.2000.880545
Filename
880545
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