RF small signal avalanche characterization and repercussions on bipolar transistor circuit design

In face of increasing demands for high frequency and high output power of modern bipolar transistor circuits, electronic circuit designers are exploring regimes of transistor operation that meet both conditions and enter regimes close to or within the avalanche regime. The present paper addresses possible RF avalanche characterization techniques. Repercussions of working in the avalanche regime on some important transistor properties like unilateral and maximum available power gain, as well as on the stability factor are presented, demonstrated by measurements on modern industrial devices and analysed by corresponding simulations using the physics-based world standard compact model for bipolar transistors, Mextram.