Title :
Quantum dot devices for optoelectronics applications
Author :
Su, Y.K. ; Ji, L.W.
Author_Institution :
Inst. of Microelectron. & Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
This work focused on the optoelectronics applications of nitride-based quantum dot devices. It includes the growth and characterization of InGaN/GaN self-assembled quantum dots (SAQDs) and related optoelectronic devices (MQD LEDs and MSM PDs with QDs) by metalorganic vapor phase epitaxy (MOVPE). The optical and structural properties of InGaN/GaN nanostructures have been characterized by photoluminescence (PL), Raman, scanning near-field optical microscopy (SNOM), atomic force microscopy (AFM), and high-resolution transmission electron microscopy (HRTEM), respectively.
Keywords :
III-V semiconductors; MOCVD; atomic force microscopy; gallium compounds; indium compounds; nanotechnology; near-field scanning optical microscopy; optoelectronic devices; photoluminescence; semiconductor quantum dots; transmission electron microscopy; vapour phase epitaxial growth; wide band gap semiconductors; InGaN-GaN; InGaN/GaN; Raman; atomic force microscopy; metalorganic vapor phase epitaxy; nanostructures; nitride-based quantum dot devices; optoelectronics applications; photoluminescence; scanning near-field optical microscopy; self-assembled quantum dots; transmission electron microscopy; Atom optics; Atomic force microscopy; Electron optics; Epitaxial growth; Gallium nitride; Optical microscopy; Quantum dots; Scanning electron microscopy; Self-assembly; Transmission electron microscopy;
Conference_Titel :
Emerging Information Technology Conference, 2005.
Print_ISBN :
0-7803-9328-7
DOI :
10.1109/EITC.2005.1544334
