DocumentCode :
2580647
Title :
Ab-initio investigation of the early stage of nano-scale thin film growth: Co and Al adatoms on Co (111) surface
Author :
Kim, Chiho ; Kim, Sang-Pil ; Chung, Yong-Chae
Author_Institution :
Dept. of Ceramic Eng., Hanyang Univ., Seoul, South Korea
fYear :
2003
fDate :
29-31 Oct. 2003
Firstpage :
226
Lastpage :
227
Abstract :
We considered the diffusion behavior which occurred in the initial stages of thin film deposition for fabrication of tunneling magneto-resistance (TMR) junction with the use of ab-initio density functional theory. Al adatom deposited on the Co (111) substrate had the most stable configuration when it is adsorbed on hcp site and the energy barrier for the diffusion to neighbor fcc or hcp site was low enough to move freely. The energy barrier for the Co on the Co substrate was about 3.8 times higher than Al on Co case. The energies for the step down (step energy barrier) of adatom from the top of the adatom trimer were estimated as 0.15 eVand 1.27 eV for Al/Al trimer/Co and Co/Co trimer/Co, respectively.
Keywords :
ab initio calculations; adsorption; aluminium; cobalt; density functional theory; diffusion barriers; ferromagnetic materials; metallic thin films; nanostructured materials; surface diffusion; tunnelling magnetoresistance; Al; Al adatoms; Co; Co (111) surface; Co adatoms; TMR; ab-initio density functional theory; adsorption; diffusion; energy barrier; hcp site; nanoscale thin film growth; thin film deposition; tunneling magnetoresistance junction; Artificial intelligence; Atomic layer deposition; Density functional theory; Energy barrier; Fabrication; Magnetic devices; Sputtering; Substrates; Surface morphology; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
Type :
conf
DOI :
10.1109/IMNC.2003.1268725
Filename :
1268725
Link To Document :
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