DocumentCode
2580647
Title
Ab-initio investigation of the early stage of nano-scale thin film growth: Co and Al adatoms on Co (111) surface
Author
Kim, Chiho ; Kim, Sang-Pil ; Chung, Yong-Chae
Author_Institution
Dept. of Ceramic Eng., Hanyang Univ., Seoul, South Korea
fYear
2003
fDate
29-31 Oct. 2003
Firstpage
226
Lastpage
227
Abstract
We considered the diffusion behavior which occurred in the initial stages of thin film deposition for fabrication of tunneling magneto-resistance (TMR) junction with the use of ab-initio density functional theory. Al adatom deposited on the Co (111) substrate had the most stable configuration when it is adsorbed on hcp site and the energy barrier for the diffusion to neighbor fcc or hcp site was low enough to move freely. The energy barrier for the Co on the Co substrate was about 3.8 times higher than Al on Co case. The energies for the step down (step energy barrier) of adatom from the top of the adatom trimer were estimated as 0.15 eVand 1.27 eV for Al/Al trimer/Co and Co/Co trimer/Co, respectively.
Keywords
ab initio calculations; adsorption; aluminium; cobalt; density functional theory; diffusion barriers; ferromagnetic materials; metallic thin films; nanostructured materials; surface diffusion; tunnelling magnetoresistance; Al; Al adatoms; Co; Co (111) surface; Co adatoms; TMR; ab-initio density functional theory; adsorption; diffusion; energy barrier; hcp site; nanoscale thin film growth; thin film deposition; tunneling magnetoresistance junction; Artificial intelligence; Atomic layer deposition; Density functional theory; Energy barrier; Fabrication; Magnetic devices; Sputtering; Substrates; Surface morphology; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-040-2
Type
conf
DOI
10.1109/IMNC.2003.1268725
Filename
1268725
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