Title :
High temperature behaviours of aluminium nitride
Author :
Dagdag, S. ; Lebey, T. ; Dinculescu, Sorin ; Saiz, J. ; Dutarde, E.
Author_Institution :
LAPLACE, Toulouse
Abstract :
One of the most attractive ways to increase power handling capability in power modules is to increase the operating temperature. Aluminium nitride based ceramics are claimed to be the ideal candidates to be used as substrates. However, depending on the elaboration process a decrease of the AlN dielectric strength may be observed. These results are discussed in the following paper.
Keywords :
III-V semiconductors; aluminium compounds; ceramics; electric strength; high-temperature electronics; wide band gap semiconductors; AlN; aluminium nitride based ceramics; dielectric strength; high temperature behaviour; high temperature electronics; packaging; passive component; system integration; Aluminum; Ceramics; Dielectric breakdown; Dielectric materials; Dielectric substrates; Permittivity; Plasma temperature; Power electronics; Temperature distribution; Thermal conductivity; High temperature electronics; Passive component; packaging; system integration;
Conference_Titel :
Power Electronics and Applications, 2007 European Conference on
Conference_Location :
Aalborg
Print_ISBN :
978-92-75815-10-8
Electronic_ISBN :
978-92-75815-10-8
DOI :
10.1109/EPE.2007.4417337
