DocumentCode :
2580687
Title :
Observation of spin-dependent tunnel conductance by spin-polarized scanning tunneling microscopy using Ni tips
Author :
Murahara, Daisuke ; Kobayashi, Yoshiyuki ; Yamaguchi, Koicbi
Author_Institution :
Dept. of Electron. Eng., Univ. of Electro-Commun., Tokyo, Japan
fYear :
2003
fDate :
29-31 Oct. 2003
Firstpage :
232
Lastpage :
233
Abstract :
We present the observed results of spin-dependent tunnel conductance by SP-STM using the Ni tip and the Ni thin film samples. The tunnel conductance spectra generally depended on the magnetization direction of the Ni samples. It suggests the possibility of local tunnel injection and detection of the spin-polarized electrons between the magnetic tip and the single quantum dot.
Keywords :
III-V semiconductors; Kerr magneto-optical effect; coercive force; ferromagnetic materials; gallium arsenide; magnetic hysteresis; magnetic thin films; metallic thin films; nickel; scanning tunnelling microscopy; semiconductor quantum dots; semiconductor-metal boundaries; spin polarised transport; tunnelling; GaAs; Ni; Ni thin film; Ni tips; magnetic tip; magnetization; single quantum dot; spin-dependent tunnel conductance; spin-polarized electrons detection; spin-polarized scanning tunneling microscopy; tunnel injection; Magnetic materials; Magnetic separation; Magnetization; Nanoscale devices; Quantum dots; Scanning electron microscopy; Sputtering; Transistors; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
Type :
conf
DOI :
10.1109/IMNC.2003.1268729
Filename :
1268729
Link To Document :
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