Title :
Electrical field analysis of nanoscale field effect transistors
Author :
Boudjella, Aissa ; Jin, Zhongfang ; Savaria, Yvun
Author_Institution :
Genie Electrique, Ecole Polytech. de Montreal, Que., Canada
Abstract :
We have studied the gate field penetration and modulation of molecular channels by presenting field analysis results for different nanoscale geometry structure of SAMFETs.
Keywords :
field effect transistors; monolayers; self-assembly; semiconductor device models; SAMFETs; electrical field analysis; gate field penetration; molecular channels modulation; nanoscale field effect transistors; nanoscale geometry structure; Dielectric materials; Electrostatic analysis; FETs; Geometry; Mesh generation; Numerical simulation; Permittivity; Poisson equations; Visualization; Voltage;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268735
