DocumentCode
2580797
Title
Second-harmonic reflector type high-gain FET frequency doubler operating in K-band
Author
Iyama, Y. ; Iida, A. ; Takagi, T. ; Urasaki, S.
Author_Institution
Mitsubishi Electr. Corp., Kanagawa, Japan
fYear
1989
fDate
13-15 June 1989
Firstpage
1291
Abstract
A high-gain FET frequency doubler with a second-harmonic reflector in the input circuit has been developed. The reflector position which gives maximum multiplication gain depends on line loss. The relation between multiplication gain and the reflector position varies with line loss. A K-band frequency doubler designed on this basis was fabricated, showing a multiplication gain of 6 dB.<>
Keywords
equivalent circuits; field effect transistor circuits; frequency multipliers; solid-state microwave circuits; 6 dB; FET frequency doubler; K-band; SMF; high-gain; line loss; microwave circuits; multiplication gain; reflector position; reflector type; Design methodology; Diodes; Double-gate FETs; Equivalent circuits; K-band; Oscillators; Phase noise; Power system harmonics; Radio frequency; Stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location
Long Beach, CA, USA
Type
conf
DOI
10.1109/MWSYM.1989.38963
Filename
38963
Link To Document