Title :
Second-harmonic reflector type high-gain FET frequency doubler operating in K-band
Author :
Iyama, Y. ; Iida, A. ; Takagi, T. ; Urasaki, S.
Author_Institution :
Mitsubishi Electr. Corp., Kanagawa, Japan
Abstract :
A high-gain FET frequency doubler with a second-harmonic reflector in the input circuit has been developed. The reflector position which gives maximum multiplication gain depends on line loss. The relation between multiplication gain and the reflector position varies with line loss. A K-band frequency doubler designed on this basis was fabricated, showing a multiplication gain of 6 dB.<>
Keywords :
equivalent circuits; field effect transistor circuits; frequency multipliers; solid-state microwave circuits; 6 dB; FET frequency doubler; K-band; SMF; high-gain; line loss; microwave circuits; multiplication gain; reflector position; reflector type; Design methodology; Diodes; Double-gate FETs; Equivalent circuits; K-band; Oscillators; Phase noise; Power system harmonics; Radio frequency; Stability;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38963
