Determination of the feedback capacity of a low voltage trench gate MOSFET from dynamic measurements

Information on transient transistor capacities - especially on the feedback capacity - is not only important for the calculation of switching losses and the driver design of automotive electronics but also for estimating their transient and their EMC behavior. However, data sheets supply little information on these capacities. This is why this paper presents a procedure for the determination of the feedback capacity from dynamic measurements. The plausibility of the determined feedback capacity characteristic is verified in a behavioral simulation model. Making clear that the dynamic measurement analysis leads to a reasonable result for low voltage trench gate MOSFETs, the findings of this paper should be applied to high voltage devices.