Title :
Nucleation of tungsten by chemical vapor deposition from WF/sub 6/ and SiH/sub 4/
Author :
Kajikawa, Y. ; Tsumura, Tomoaki ; Noda, S. ; Komiyama, H. ; Shimogaki, Y.
Author_Institution :
Dept. of Chem. Syst. Eng., Tokyo Univ., Japan
Abstract :
In this paper, we investigated the nucleation process of W from WF/sub 6/ and SiH/sub 4/ by using a cold wall-type CVD reactor. W was then deposited from WF/sub 6/(0.42vol%)/SiH/sub 4/(0.42vol%)/ H/sub 2/(33vol%)/Ar at 5 Torr. TiN substrates were heated up under Ar atmosphere and hold at 673 K for 20 min under 35 vol% H/sub 2//Ar atmosphere at 5 Torr. The surface states was monitored in-situ by using field emission scanning electron microscopy (FESEM), micro Auger electron spectroscopy (AES), and X-ray photoelectron spectroscopy (XPS).
Keywords :
Auger electron spectra; X-ray photoelectron spectra; chemical vapour deposition; electron field emission; metallic thin films; nucleation; scanning electron microscopy; surface states; tungsten; 20 min; 5 torr; 673 K; AES; SEM; TiN; TiN substrates; W; X-ray photoelectron spectroscopy; XPS; chemical vapor deposition; field emission; micro Auger electron spectroscopy; nucleation; scanning electron microscopy; surface states; tungsten; Argon; Atmosphere; Chemical vapor deposition; Electron emission; Inductors; Monitoring; Photoelectron microscopy; Spectroscopy; Tin; Tungsten;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268743
