Title :
Etching characteristics of Ta using BCl/sub 3//Cl/sub 2//Ar inductively coupled plasma
Author :
Lee, Y.S. ; Na, S.W. ; Song, S.G. ; Kim, Y.M. ; Lee, N.-E. ; Ahn, J.H.
Author_Institution :
Dept. of Mater. Eng., Sung Kyun Kwan Univ., Kyunggi, South Korea
Abstract :
Etching characteristics of 500nm thick Ta was investigated using inductively coupled BCl/sub 3//Cl/sub 2//Ar plasma. A positive photoresist (PR) with a thickness of 1.2/spl mu/m on Ta films were patterned using conventional photolithography. Etch rate and profiles were measured by a field-emission scanning electron microscopy (FE-SEM). XPS was used to investigate the chemical state of the etched surface for various gas mixing ratios.
Keywords :
ESCA; X-ray photoelectron spectra; electron field emission; masks; metallic thin films; photoresists; scanning electron microscopy; sputter etching; tantalum; 1.2 micron; 500 nm; BCl/sub 3/-Cl/sub 2/-Ar; SEM; Ta; XPS; chemical state; etch rate; field-emission; inductively coupled BCl/sub 3//Cl/sub 2//Ar plasma; mask; photolithography; photoresist; plasma etching; scanning electron microscopy; Argon; Chemicals; Etching; Lithography; Plasma applications; Plasma chemistry; Plasma measurements; Plasma properties; Resists; Scanning electron microscopy;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268744
