Title :
Patterning of self-assembly surfactant templated nanoporous silica thin film as an ultra low-k dielectric
Author :
Cho, A.T. ; Pan, F.M. ; Yen, C.W. ; Chen, J.Y. ; Chen, Y.J. ; Chao, K.J.
Author_Institution :
Nat. Nano Device Lab., Hsinchu, Taiwan
Abstract :
We have studied dry etching characteristics of the the nanoporous silica dielectric using Ar/CHF/sub 3//CF/sub 4/ as the plasma gas source. Trimethylsilylation by hexamethyldisilazane (HMDS) vapor treatment is used to improve hydrophobicity of nanoporous silica dielectrics. During dry etch and resist ashing, hydrophobicity of the nanoporous silica thin films is destroyed, leading to serious degradation in the dielectric property.
Keywords :
dielectric materials; dielectric thin films; nanoporous materials; photoresists; self-assembly; silicon compounds; sputter etching; surfactants; SiO/sub 2/; dielectric materials; dielectric property; dry etching; hydrophobicity; nanoporous silica thin film; resist ashing; self-assembly surfactant templated film; Argon; Dielectric thin films; Dry etching; Nanoporous materials; Plasma applications; Plasma properties; Plasma sources; Resists; Self-assembly; Silicon compounds;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268746
