Title :
Electronically tuned UHF power amplifier
Author :
Raab, Frederick H.
Author_Institution :
Green Mountain Radio Res. Co., Colchester, VT, USA
Abstract :
This electronically tunable UHF power amplifier (PA) is based upon a gallium-nitride (GaN) HEMT operated in class C. The gate input is tuned by two arrays of varactor diodes. The drain output is tuned by a three-stub tuner whose stub lengths are controlled by pin diodes. From 325 to 800 MHz (factor of 2.5:1), the PA delivers an output of 34 to 50 W with an overall efficiency of 47 to 65 percent.
Keywords :
III-V semiconductors; UHF power amplifiers; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; electronically tunable UHF power amplifier; frequency 800 MHz to 325 MHz; gallium-nitride HEMT; gate input; pin diodes; stub lengths; three-stub tuner; varactor diode arrays; Capacitance; Logic gates; PIN photodiodes; Power amplifiers; Tuners; Varactors; Power amplifier; UHF; electronic tuning; pin diode; reconfigurable; varactor;
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5972557
