DocumentCode
2581069
Title
Fully integrated 50 Gbit/s half-rate linear phase detector in SiGe BiCMOS
Author
Joram, Niko ; Barghouthi, Atheer ; Knochenhauer, Christian ; Ellinger, Frank ; Scheytt, Christoph
Author_Institution
Dept. of Circuit Design & Network Theor., Tech. Univ. Dresden, Dresden, Germany
fYear
2011
fDate
5-10 June 2011
Firstpage
1
Lastpage
4
Abstract
This paper presents a fully integrated half-rate linear phase detector for clock and data recovery (CDR) in serial communication systems which is capable of operating up to 50 Gbit/s. Because of its half-rate architecture, the phase detector features inherent 1:2 demultiplexing. Also, a charge pump and a simple loop filter is integrated on-chip, which allows characterizing the performance of the phase detector. At a core supply voltage of 3.3 V and an input bias voltage of 3.6 V, the total power consumption of the integrated circuit amounts to 1.22 W. Using a 0.25 μm SiGe HBT BiCMOS technology, the chip core area occupies 1.1×0.8mm2.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; clock and data recovery circuits; demultiplexing; heterojunction bipolar transistors; phase detectors; semiconductor materials; HBT BiCMOS technology; SiGe; bit rate 50 Gbit/s; charge pump; clock and data recovery; demultiplexing; fully integrated half-rate linear phase detector; loop filter; serial communication systems; size 0.25 mum; voltage 3.3 V; voltage 3.6 V; BiCMOS integrated circuits; Charge pumps; Clocks; Detectors; Phase measurement; Silicon germanium; Transmission line measurements; Clock and data recovery (CDR); SiGe BiCMOS; half-rate linear phase detector;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location
Baltimore, MD
ISSN
0149-645X
Print_ISBN
978-1-61284-754-2
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2011.5972560
Filename
5972560
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